ETRI publicized its independently developed technologies for GaN RF power amplifiers and GaN power semiconductors at one of the largest trade shows in Europe, the European Microwave Week Exhibition, held in Rome, Italy, between October 4 and 10. They drew a great deal of attention not only from domestic and overseas academic circles, but also from overseas businesses engaged in radio frequency equipment and systems.
The technologies presented by ETRI use gallium nitride(GaN) instead of the existing semiconductors such as silicon(Si) or gallium arsenide(GaAs), thereby increasing power density tenfold, transducer replacement period by 16 times, and power efficiency by over 30 percent.
The technologies presented by ETRI use gallium nitride(GaN) instead of the existing semiconductors such as silicon(Si) or gallium arsenide(GaAs), thereby increasing power density tenfold, transducer replacement period by 16 times, and power efficiency by over 30 percent.
In addition, these technologies are currently held by some of the top businesses in the global semiconductor industry and are providing the core technology for next-generation, high-power semiconductor amplifiers in national defense and mobile telecommunications that can be applied to the development of high-power radars.
Recognizing ETRI’s outstanding technological competitiveness at the exhibition, BAE Systems, a globally leading aerospace system developer in the United Kingdom, expressed its intent for investment. A number of mobile telecommunications companies in China and power amplifier manufacturers in the U.K. also made inquiries on technology transfer regarding RF chips.
Recognizing ETRI’s outstanding technological competitiveness at the exhibition, BAE Systems, a globally leading aerospace system developer in the United Kingdom, expressed its intent for investment. A number of mobile telecommunications companies in China and power amplifier manufacturers in the U.K. also made inquiries on technology transfer regarding RF chips.
