ㅇ 제목 : Si-based mm-wave and terahertz integrated circuits

ㅇ 일시 : 2017년 5월 24일 (수) 오전 10:30~

ㅇ 장소 : ETRI 3동 207호

ㅇ 강사 : 고려대학교 이재성교수

ㅇ 요약 :  

Interests in implementing THz components based on transistor-based semiconductor technologies are growing fast owing to the recent advancements in commercial process technologies. Si-based technologies, such as CMOS and SiGe, have been traditionally considered not quite suitable for high frequency applications. However, the continuous efforts for scaling and material innovation for Si technologies has resulted in significantly improved device operation speed, which now reaches a few hundred GHz in terms of device fmax. Based on these technologies, various types of mm-wave and THz circuits operating beyond 100 GHz are being widely reported these days around the world. In these talk, various types of Si-based mm-wave and THz sources and detectors recently developed in the authors’ group will be introduced. Additionally, selected applications based on these circuits will also be presented.